Low temperature homoepitaxial growth of 4H-SiC on 4° off-axis carbon-face substrate using BTMSM source

摘要

Homoepitaxial 4H-SiC thin films were grown on (000-1) C-face substrate by cold-wall chemical vapor deposition (CVD) using bis-trimethylsilylmethane (BTMSM, C_7H_(20)Si_2) precursor. Because of the polarity difference of C-face and (0001) Si-face, epitaxial growth conditions of C-face was quite different from those of Si-face. To improve the quality of C-face epitaxial films, effects of epitaxial growth conditions on surface morphology and crystallinity of epitaxial films were investigated.