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Homoepitaxial growth of SiC on low off-axis SiC wafers
Homoepitaxial growth of SiC on low off-axis SiC wafers
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机译:低轴外SiC晶片上SiC的同质外延生长
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摘要
A method for producing, on an SiC substrate (1), SiC homoepitaxial layers (3) of the same polytype as said substrate, wherein the method comprises:- growing said layers (3) on a surface of the SiC substrate (1), wherein said surface is inclined relative to the (0001) basal plane at an angle higher than 0.1 degree but less than 1 degree, and further that an homoepitaxial growth is started by forming a boundary layer (2) with a thickness up to 1 µm.
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