Homoepitaxial growth of SiC on low off-axis SiC wafers

摘要

PROBLEM TO BE SOLVED: To complete a wafer and a device by epitaxial-layer growth on an SiC substrate having an off-axis angle of less than 1 degree.;SOLUTION: The method for producing an SiC homoepitaxial layer with the same polytype as the substrate on the SiC substrate comprises a step of growing the layer on the surface of the SiC substrate, and a step of beginning the homoepitaxial growth by forming a boundary layer having a thickness of 1 m or less. In the growth step of the method, the surface (0001) is inclined at an angle of more than 0.1 degree and less than 1 degree to the basal face.;COPYRIGHT: (C)2006,JPO&NCIPI