Mobilty Modeling Of Strained Germanium (s-Ge) Quantum Well (QW)Heterostructure pMOSFETs

摘要

In this work, we have performed a thorough study of the mobilityrnin 'Si / s-Ge / Si' QW heterostructure pMOSFETs. We have beenrnable to accurately fit experimental data obtained from ultra-thinrnstrained-Ge QW FETs by theoretical calculations, in which thernhole sub-band structure is calculated by 6x6 k.p Poisson-rnSchrodinger equation, and all the important scattering mechanismsrn(acoustic phonon, optical phonon, surface roughness and alloyrnscattering) are included. Through experiments and detailedrnsimulations, the effects of the s-Ge quantum well (QW) thicknessrnand quantum confinement effects on the hole mobility of both,rnsingle-gate (SG) and double-gate (DG) QW pMOSFETs arernexplored. Theoretical optimums of the device structure arernobtained through simulations of the mobility, drive current andrnswitching delay, in highly scaled s-Ge QW DG FETs (Lg=15nmrnTs=5nm).