- MEMORY DEVICE COMPRISING A STRAINED SEMICONDUCTOR DOUBLE-HETEROSTRUCTURE AND QUANTUM DOTS

摘要

An embodiment of the present invention relates to a memory comprising a modified double-hetero structure 110 having an inner semiconductor layer 115 sandwiched between two outer semiconductor layers 120 and 125, wherein the lattice constant of the inner semiconductor layer The resulting lattice strain in the double-hetero structure induces the formation of at least one quantum dot within the inner semiconductor layer, the at least one quantum dot having charge carriers in it And at least one of the quantum dots has an emission barrier Eb of at least 1.15 eV due to the lattice strain and provides an energy state density of at least three energy states per 1000 nm ³ , At least three energy states 186 are located within an energy band (DeltaWb) of 50 meV or less.