Quantum well and quantum dot lasers: From strained-layer and self-organized epitaxy to high-performance devices

摘要

Strained heterostructures are now widely used to realize high-performance lasers. Highly mismatched epitaxy also produces defect-free quantum dots via an island growth mode. The characteristics of high-speed strained quantum well and quantum dot lasers are described. It is seen that substantial improvements in small-signal modulation bandwidth are obtained in both 1 μm (48 GHz) and 1.55 μm (26 GHz) by tunneling electrons directly into the lasing sub-band. In quantum dots the small-signal modulation bandwidth is limited by electron-hole scattering to ∼7 GHz at room temperature and 23 GHz at 80 K. The properties of these devices are described.