Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress

摘要

Well-behaved Ge quantum well (QW) p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) were fabricated on silicon-on-insulator (SOI) substrate. By optimizing the growth conditions, ultrathin fully strained Ge film was directly epitaxially grown on SOI at about 450 °C using ultra-high vacuum chemical vapor deposition. In situ Si~(2)H~(6) passivation of Ge was utilized to form a high-quality SiO~(2)/Si interfacial layer between the high-κ dielectric and channels. Strained Ge QW pMOSFETs achieve the significantly improved effective hole mobility μ ~(eff) as compared with the relaxed Si and Ge control devices. At an inversion charge density of Q ~(inv) of 2 × 10_(12) cm_(?2), Ge QW pMOSFETs on SOI exhibit a 104% μ ~(eff) enhancement over relaxed Ge control transistors. It is also demonstrated that μ ~(eff) of Ge pMOSFETs on SOI can be further boosted by applying an external uniaxial compressive strain.