Control of Critical Pressure and Adhesion Strength in Copper and Low Dielectric Constant Layer in The CMP

摘要

Peeling is serious problem in the CMP for copper and lowεlayer. This paper describes origins of this peeling. This peeling is affected largely by the barrier layer, stress of copper and low k layer. Critical pressure of the layer which is defined as the pressure began to occur the peeling is observed quantitatively in the mechanical and chemical polishing. This pressure is closely related with the adhesion strength, stress and agglomeration of these layers. Reduction of the stress and enhancement of adhesion stress are important task. These can be attained with development of new materials and. new processes. Such improvement will be more important in the advanced CMP.