Schottky Barrier Height Between Erbium Silicide and Various Morphology of Si(100) Surface Changed by Alkaline Etching

摘要

Electrical and physical properties of ErSi_x on n-type Si(100) surfaces with an alkaline solution etching are investigated. The (111) facet of Si surface affects the SBH between ErSi_x and n-type Si, because the SBH depends on the surface orientation of Si. A controlling the facet of orientation is a key parameter for a reducing contact resistance for high performance MISFETs. These silicidation reactions are very important to develop the high current drivability devices.