Schottky-barrier diode photodetector, esp. for IR radiation - has thin film of metal from iron or platinum gp. or silicide deposited on semiconductor surface made irregular by anisotropic etching

摘要

A thin metallic film (2) is applied by physical or chemical vapour deposition on a base (1) of semiconducting Si having max. purity after the surface has been roughened by conventional anisotropic chemical etching. The process is chosen so that one-dimensional structural variations in the direction of the normal to the base are comparable with or much smaller than the wavelength of the incident radiation (4 or 5). The direction of the normal to the interface (3) shows continuous variation. ADVANTAGE - Efficiency and esp. quantum yield are improved by increased transition probability at surface regions which are severely irregular in direction.