Progress in SiC and GaN microwave devices fabricated onsemi-insulating 4H-SiC substrates

摘要

The two technologies being studied are SiC MESFETs based onnhomoepitaxially grown epilayers, primarily targeted for applicationsnfrom UHF up to 10 GHz, and GaN/AlGaN HEMTs that are grown vianheteroepitaxial MOCVD which can operate at frequencies potentially up ton35 GHz. As a result of the use of 4H-SiC semi-insulating substrates,nimpressive demonstrations of microwave power have been made in bothntypes of devices. This paper will describe progress made in SiCnsubstrates, and some of the resulting microwave device demonstrations innboth SiC MESFETs and in GaN/AlGaN devices grown on SiC