GROWTH OF SiGeC LAYERS BY GSMBE AND THEIR CHARACTERIZATION BY X-RAY TECHNIQUES

摘要

SiGeC layers are grown in a gas source molecular beam epitaxy system at low temperatures from disilane, germane and methylsilane precursors. The layers were annealed using rapid thermal annealing and analyzed with X-ray diffraction, X-ray reflectivity and secondary ion mass spectrometry. The recovery of compressive strain in the SiGeC layer is correlated to the loss of carbon through diffusion and indicates that the carbon atoms are incorporated substitutionally in the as-grown layers. A scheme is developed for accurate measurement of the substitutional carbon concentration at or below 1% level in SiGe.