High-quality GaAs/Al_(0.5)Ga_(0.5)As and InAs/AlAs quantum wire superlattices (QWR) are obtained by migration enhanced epitaxy on 2 deg vicnal GaAs and 3 deg vicinal InP substrate, respectively. A superbly well-defined 1-D structure was observed in InAs/AlAs QWR by AFM image in the wide range of growth temperature. The linewidth change of the magneto-liminescence peaks in GaAs/Al_(0.5)Ga_(0.5)As QWR is very unique, which is step-like for the field B<9T and linear for B>9T. This anomalous change, which is well explaine with the statistical fluctuation model and the physical dimensions of magneto-exciton, cyclotron orbit and QWR, also provides an strogn evidence of 1-D confinement.
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