Self-assembled InAs quantum dots and their applications to nanostructure devices grown on GaAs

摘要

We report on the growth and device applications of self-assembled InAs quantum dots on (100)GaAs substrates grown by MBE. A series of distinct current peaks were observed up to 40K in a split-gate heterojunction field-effect transitor (HFET) with self-assembled INAs dots formed on the bottom of thechannel. Up to six electrons seemed to be involved per dot. RTD structure with large sized(800A wide) dots showed hystersis characteristics at 300K due to charging of the dots buried in the cathode side. The operation temperature dependence on device structure and materials are discussed.