X-ray absorption spectroscopy to investigate the doping mechanism in disordered Cu_2ZnSnS_4 thin films

摘要

Cu_2ZnSnS_4 (CZTS) is an Earth-abundant and non-toxic chalcogenide semiconductor which is capable of terawatts-level scale deployment. Due to its high absorption coefficient of above 104 cm~(-1) and direct bandgap (1.5 eV), it is suitable to be used as an absorber layer for high-efficiency thin-film photovoltaics. It is initially proposed as a possible replacement for Cu(In,Ga)Se_2 (CIGS) thin film absorber layer to overcome supply limitations of In and Se and crystalline CZTS has begun to receive much attention from the research community following the announcement of an 9.6% efficient device based on a CZT(S,Se) alloy in 2010.