GROWTH OF MONOLAYER MOLYBDENUM DISULFIDE AND DISELENIDE WITH CHEMICAL VAPOR DEPOSITION

摘要

Monolayer molybdenum disulfide (MoS_2) and diselenide (MoSe_2), as semiconductors with a direct band gap, have attracted much attention recently due to their novel properties, and potential application in field effect transistors, photo-electronics, spintronics, valleytronics. Previously, monolayer MoS_2 or MoSe_2 were exfoliated with an adhesive tape. Here, both monolayer MoS_2 and MoSe_2 are synthesized with a very simple chemical vapor deposition method. The as-grown samples are characterized with Raman and photoluminescence, demonstrating the samples are monolayer.