Examining Performance Enhancement of p-Channel Strained-SiGe MOSFET Devices

摘要

We examine performance enhancement of p-channel SiGe devices using our particle-based device simulator that takes into account self-consistently the bandstructure and the quantum mechanical space-quantization and mobility enhancement effects. We find surface roughness to be the dominant factor for the bad performance of p-channel SiGe devices when compared to conventional bulk p-MOSFETs at high bias conditions. At low and moderate bias conditions, when surface-roughness does not dominate the carrier transport, we observe performance enhancement in the operation of p-channel SiGe MOSFETs versus their conventional Si counterparts.