Improved device performance and reliability of n-channel and p-channel MOSFETs with ultrathin gate oxides prepared by conventional furnace oxidation of Si in pure N/sub 2/O ambient

摘要

Summary form only given. Ultrathin gate oxides prepared by rapid thermal oxidation of Si in pure N/sub 2/O exhibit superior resistance to dopant penetration and electrical stressing as compared to pure SiO/sub 2/. The improved performance and excellent reliability (on- and off-state) of both n- and p-MOSFETs with ultrathin ( approximately 60-AA) gate oxides were prepared by conventional furnace oxidation of Si in N/sub 2/O. The results suggest that the N/sub 2/O oxide is a promising candidate for ultrathin gate dielectric technology for CMOS ULSI applications.