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Formation of ordered and disordered dielectric/metal nanowire arrays and their plasmonic behavior

机译:有序和无序介电/金属纳米线阵列的形成及其等离子体行为

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We have recently shown that dielectric/metal composite nanowires can exhibit very strong surface enhanced Raman (SERS) signals, when arranged in a random 3D geometry. Since we believe that the intersections of nanowires are critical in generating the high electric fields necessary for this enhancement, we are investigating this effect under more controlled conditions. Thus, we will discuss the formation of nanowire arrays by in-situ growth, achieved by the control of nanowire material/substrate combination, as well as ex-situ nanowire array formation involving e-beam lithography. The effects of nanowire geometry and the resulting SERS behavior show the importance of the dielectric/metal configuration, as well as the importance of nanowire geometry in the SERS effect.
机译:我们最近显示,当以随机3D几何形状排列时,电介质/金属复合纳米线可以表现出非常强的表面增强拉曼(SERS)信号。由于我们认为纳米线的交叉点对于产生增强所需的高电场至关重要,因此我们正在研究在更可控的条件下产生的这种效应。因此,我们将讨论通过原位生长形成的纳米线阵列,该纳米线阵列是通过控制纳米线材料/基板组合以及涉及电子束光刻的非原位纳米线阵列形成来实现的。纳米线几何形状的影响和所得的SERS行为表明了介电/金属配置的重要性,以及纳米线几何形状在SERS效应中的重要性。

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