首页> 外国专利> DERIVATIVES (TRIS) oxalate transition metal cations spirocyclic SERIES, ordered arrays of nanowires photochromic FERROMAGNETS, PROCESS FOR THEIR PREPARATION, MEMBRANE FOR THE CONSERVATION OF INFORMATION AND MAGNETIC APPLICATION ordered arrays of nanowires photomagnetic material as photosensitive MAGNETIC MEDIA

DERIVATIVES (TRIS) oxalate transition metal cations spirocyclic SERIES, ordered arrays of nanowires photochromic FERROMAGNETS, PROCESS FOR THEIR PREPARATION, MEMBRANE FOR THE CONSERVATION OF INFORMATION AND MAGNETIC APPLICATION ordered arrays of nanowires photomagnetic material as photosensitive MAGNETIC MEDIA

机译:衍生物(TRIS)草酸盐过渡金属阳离子螺环系列,纳米线光致变色铁磁网的有序阵列,其制备过程,用于信息和磁性保存的膜,作为光敏磁性介质的纳米线光磁材料的有序阵列

摘要

FIELD: nanotechnologies.;SUBSTANCE: invention relates to ordered photochromic ferromagnet arrays of nanowires on the basis of (tris)oxalates of transition meals and cations of spirocyclic row and may be used as light-sensitive magnetic nanomedia with supercapacious magnetooptic memory. The assigned task is solved by compounds in the form of derivative (tris)oxalates of transition metals and cations of spirocyclic row with general formula PCMe1Me2(C2O4)3, where M1, M2 - 3d metals, PC - photochromic cations having photomagnet properties. Ordered arrays of nanowires of photochromic ferromagnets are produced by incorporation of above compounds into pores of the membrane from anodixed aluminium oxide (AOA), density of which makes 1011-1013 cm-2, and pore size is 20-200 nm. Ordered arrays of nanowires of photochromic ferromagnets are used as light-sensitive magnetic media for production of materials with supercapacious magnetooptic memory of up to 1013 bit/cm2.;EFFECT: development of ordered arrays of nanostructures, in which elementary cells are nanowires of photochromic material with magnetic ordering.;3 cl, 6 dwg
机译:技术领域本发明涉及基于过渡粉的(三)草酸盐和螺环行的阳离子的纳米线的有序光致变色铁磁体阵列,并且可以用作具有超大容量磁光存储器的光敏磁性纳米介质。所分配的任务通过过渡金属的衍生物(三)草酸盐和螺环行阳离子的化合物(通式为PCMe 1 Me 2 (C 2 O 4 3 ,其中M 1 ,M 2 -3d金属,PC-具有光磁铁特性的光致变色阳离子。通过将上述化合物从阳极氧化氧化铝(AOA)掺入膜的孔中,产生光致变色铁磁体纳米线的有序阵列,其密度为10 11 -10 13 cm -2 ,孔径为20-200 nm。光致变色铁磁体的纳米线的有序阵列用作光敏磁性介质,用于生产具有超大磁光记忆力达10 13 bit / cm 2 的材料。纳米结构的有序阵列的发展,其中基本单元是具有磁性有序的光致变色材料的纳米线。; 3 cl,6 dwg

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