首页> 外国专利> Moving magnetic domains in an array of nanowires by simultaneous application of an operational field and depinning energy to pinning sites

Moving magnetic domains in an array of nanowires by simultaneous application of an operational field and depinning energy to pinning sites

机译:通过同时施加操作场和将能量钉扎到钉扎点来移动纳米线阵列中的磁畴

摘要

A serial magnetic mass storage device and associated data storage method of the kind in which data is encoded in single magnetic domains in nanowires. In the invention, the nanowires (10) are provided with a large number of notches (12) along their length to form domain wall pinning sites. Moreover, the notches are addressed in groups (A, B, C) by heating electrodes. By alternately heating the notches hosting head-to-head and tail-to-tail domain walls (16, 18) in synchrony with alignment and anti-alignment of an operating field (H) along the nanowire the magnetic domains (14) are moved along the nanowire by alternate movement of the head-to-head and tail-to-tail domain walls in caterpillar or worm-like motion in which the domains are incrementally lengthened and shortened by one inter-notch distance as they move along the nanowires under the joint coordinated action of the heating and alternating operating field. From an interconnect and fabrication standpoint, the scheme can be scaled almost without restriction out of the plane of the substrate to provide hundreds or thousands of stacked layers of nanowires, thus allowing very dense three-dimensional networks of stored information to be realised.
机译:一种串行磁性大容量存储设备和相关的数据存储方法,其中数据在纳米线的单个磁畴中编码。在本发明中,纳米线(10)沿其长度设有大量凹口(12),以形成畴壁钉扎位点。此外,通过加热电极将切口分为组(A,B,C)。通过与沿纳米线的工作场(H)的对准和反对准同步地交替加热容纳头对头和尾对尾畴壁(16、18)的凹口,使磁畴(14)移动通过头到尾和尾到尾的畴壁在毛毛虫或蠕虫状运动中的交替运动沿着纳米线移动,其中,当畴沿着纳米线在下方移动时,畴会逐渐加长并缩短一个缺口距离加热和交替操作场的联合协调作用。从互连和制造的角度来看,该方案几乎可以在不超出基板平面的范围内进行缩放,以提供数百或数千个纳米线的堆叠层,从而可以实现存储信息的非常密集的三维网络。

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