交替刻蚀制备有序锯齿形硅纳米线阵列及其光学性能研究

摘要

采用金属催化化学刻蚀法(MCCE),以金属Ag为催化剂,在HF与H2O2体系中通过交替刻蚀在P(111)硅衬底上制备出锯齿形硅纳米线阵列.利用扫描电子显微镜对硅纳米线的形貌进行了表征,研究了HF浓度与H2O2浓度对纳米线刹蚀方向的调控作用.选取不同的HF与H2O2浓度配比,分别对硅基底各向同性刻蚀与各向异性刻蚀进行调控,使得刻蚀方向对溶液浓度的变化能够快速响应.在溶液Ⅰ([HF]=2.3 mol/L,[H2O2]=0.4 mol/L)与溶液Ⅱ([HF]=9.2 mol/L,[H2O2]=0.04 mol/L)中交替刻蚀,制备出刻蚀方向高度可控的大规模锯齿形硅纳米线.利用紫外-可见分光光度计对锯齿形硅纳米线的减反射性能进行研究,结果表明,其表现出优异的减反特性,最低反射率为5.9％.纳米线形貌的高度可控性使其在微电子器件领域也具有巨大的应用前景.%With the method of metal-catalytic chemical etching (MCCE),when employing metal Ag as catalyst,zigzag silicon nanowire arrays were fabricated by conducting alternate etching experiments on P(111) silicon substrate in HF and H2O2 systems.Scanning electron microscope (SEM) was adopted to characterize the morphology of silicon nanowires.The mutual effect of HF and H2O2 solution's concentration on the etching direction of silicon nanowires was investigated,and isotropic etching and anisotropic etching were intensified through respectively adjusting and controlling the concentration of HF and H2O2 solution,making it possible that the etching direction can make rapid response to the solution concentration during the alternate etching process.Zigzag silicon nanowires with highly adjustable etching direction were fabricated when conducting alternate etching experiments in solution Ⅰ ([H F] =2.3 mol/L,[H2O2] =0.4 mol/L) and solution Ⅱ ([HF] =9.2 mol/L,[H2O2] =0.04 mol/L).The anti-reflection properties of zigzag silicon nanowires were measured by UV-Vis spectrophotometer,the lowest reflectivity was 5.9 ％,which shows a good prospect for photovoltaic applications.Because of the high controllability of the nanowires morphology,it has a great application prospect in the field of microelectronic devices.