Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, INDIA;
Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, INDIA;
Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, INDIA;
Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, INDIA;
Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, INDIA;
MBE; photoluminescence; FWHM; activation energy;
机译:详细研究生长速率,单层覆盖率和势垒厚度变化对InAs / GaAs双层量子点异质结构光学特性的影响
机译:四元合金(InAlGaAs)封顶的InAs / GaAs多层量子点异质结构的热稳定性,其生长速率,势垒厚度,种子量子点单层覆盖率和生长后退火均会发生变化
机译:InAlGaAs和GaAs组合势垒厚度对MBE生长的InAs / GaAs量子点异质结构堆叠层中点形成持续时间的影响
机译:详细研究改变数量点层在应变耦合多层粘液中/ GaAs量子点异质结构中的影响
机译:InAs / GaAs量子点太阳能电池和InAs纳米线在光伏器件中的应用的光学和机械研究。
机译:变质InAs / InGaAs / GaAs量子点异质结构光电压中的双极效应:光敏器件的表征和设计解决方案
机译:Inas-Gaas和Inas-InGaas-Gaas量子点异质结构的温度依赖性调制反射率和光致发光