The Effect of Microstructure on Electromigration-Induced Failure Development

摘要

The effect of the microstructure on the electromigration failure development is analyzed. We investigate the influence of the statistical distribution of copper grain sizes on the electromigration time to failure distribution. Also, the effect of the microstructure on the formation and development of an electromigration-induced void is studied by simulation and the results are compared with experiments. It is shown that the lognormal distribution of the grain sizes resulted in lognormal distributions of the electromigration lifetimes. A close investigation has shown that the network of grain boundaries has a decisive impact in the determination of void nucleation sites and main features of void development.