Explore of A New Wafer Level Hermetic Sealing Method by Cu/Sn Isothermal Solidification Technique for MEMS/NEMS Devices

摘要

A study was preformed to explore the possibility of using Isothermal Solidification technique for sealing medium preparation in wafer level vacuum/hermetic package of MEMS/NEMS devices and to examine the effect of plasma treatment and bonding environment on the shear strength of the sealed structure. Appropriate plasma treatment can improve the bonding strength of the sealing structure and optimized parameters were obtained. The bonding strength of the sample bonded in vacuum environment is larger than in other environments. The hermeticity of the sealed structure was also evaluated. Preliminary results show that the sealed structure can satisfy the hermetic package criterion of MIL STD 883E.