Comparative Study on Structural and Electrical Characteristics of TiO_2 Film Deposited by Plasma-Enhanced Atomic Layer Deposition and RF Sputtering

摘要

Titanium dioxide film has been deposited on the p-type (100) silicon substrate using RF magnetron sputtering and Plasma-Enhanced Atomic Layer Deposition (PEALD) techniques. The effect of deposition techniques and the post-deposition annealing on the structural and electrical properties of TiO_2 film have been investigated. Multiple angle ellipsometry, X-Ray diffraction (XRD) analysis, Capacitance-Voltage (C-V), Current density-Voltage (J-V), and breakdown voltage investigations has been carried out to obtain the structural and electrical characteristics of the deposited films. XRD data illustrates the amorphous nature of the deposited film for the annealing temperature from 375 to 500 °C. Multiple angle ellipsometry results show that the PEALD and sputtered films refractive index variation from 2.0463 to 2.1348 and 2.21 to 2.75, respectively, for annealing temperature 375 to 500 °C. Electrical characteristics show the leakage current density from 10~(-5) to 10~(-6) A/cm~2 and Hatband voltage shift in the positive side of 2.4 V for PEALD and 0.2 V for sputter-deposited films.