Room-temperature memory operation of AlGaAs/GaAs high electron mobility transistors with InAs quantum dots embedded in the channel

摘要

We have investigated the room-temperature memory effect of AlGaAs/GaAs high electron mobility transistors (HEMTs) containing InAs quantum dots in the channel layer. Unlike the previously reported results where InAs quantum dots were inserted into the barrier layer, which has an analogy to flash memory, the channel potential in the proposed structure is directly modulated by the charging state of quantum dots. Although the shift of the threshold gate voltage volatilizes with the time after the memory writing operation, the shift is retained even after 1 hour at room temperature.