Electro-thermal simulation of 1200 V 4H-SiC MOSFET short-circuit SOA?

摘要

The purpose of this paper is to introduce a dynamic electro-thermal simulation and analysis approach for device design and short-circuit safe-operating-area (SOA) characterization using a physics-based electro-thermal Saber?* model. Model parameter extraction, simulation, and validation results are given for several commercially available 4H-silicon carbide (SiC) power MOSFETs with a voltage rating of 1200 V and with current ratings of 31.6 A and 42 A. The electro-thermal model and simulations are used to analyze the short-circuit SOA including the measured failure time (t) and simulated device internal junction temperature (T) at failure for different gate voltages (V) and drain voltages (V).