The Effect of Annealing Temperature on Structure of TiCrN Thin Film Deposited by DC Magnetron Sputtering Method

摘要

The DC reactive magnetron sputtering method was employed to deposit Titanium Chromium Nitride (TiCrN) thin film on silicon (100) substrates. The coatings were annealed at different temperature from 700°C to 1000°C with increase step of 100°C in air for 2 h. The crystal structure, surface morphologies, microstructure and chemical compositions were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray spectroscopy (EDX). The x-ray patterns confirmed the TiO_2 rutile structure with strong preferred orientation of (101) plane was appeared from 700°C. The crystallinity of film increased with the annealing temperatures. The lattice constant (a and c) were in the range of 4.565 - 4.607 A and 2.946 - 2.956 A. The void between grain boundaries was confirmed by FE-SEM micrograph. The cross-sectional analysis revealed that the porous structure with enhancement of thickness from 1.64 - 1.95 μm were obtained as increase annealing temperatures. The EDX results indicated that the O content increase from 0 - 60.67 At% whereas the Ti, Cr, and N contents were decreased from 43.26 - 22.40 At%, 20.65 - 2.57 At% and 51.19 - 14.36 At% through the annealing temperatures.