Aluminium nitride piezoelectric thin films reactively deposited in closed field unbalanced magnetron sputtering for elevated temperature 'smart' tribological applications.

摘要

“Smart” high temperature piezoelectric aluminum nitride (AlN) thin films were synthesized by reactive magnetron sputtering using DC; pulsed-DC, and deep oscillation modulated pulsed power (DOMPP) systems on variety of substrate materials. Process optimization was performed to obtain highly c-axis texture films with improved piezoelectric response via studying the interplay between process parameters, microstructure and properties.;AlN thin films were sputtered with DC and pulsed-DC systems to investigate the effect of various deposition parameters such as reactive gas ratio, working pressure, target power, pulsing frequency, substrate bias, substrate heating and seed layers on the properties and performance of the film device. The c-axis texture, orientation, microstructure, and chemical composition of AlN films were characterized by means of X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), and x-ray photoelectron spectroscopy (XPS).;A Michelson laser interferometer was designed and built to obtain the converse piezoelectric response of the deposited AlN thin films. Thin films with narrow AlN-(002) rocking curve of 2.5° were obtained with preliminary studies of DOMPP reactive sputtering. In-situ high temperature XRD showed excellent thermal stability and oxidation resistance of AlN films up to 1000 °C. AlN films with optimized processing parameters yielded an inverse piezoelectric coefficient, d33 of 4.9 pm/V close to 90 percent of its theoretical value.