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Effect of Sputtering Current on the Structure of TiCrN Thin Films Prepared from Mosaic Target by Reactive DC Magnetron Sputtering

机译:溅射电流对由反应性DC磁控溅射由马赛克靶制备的TiCrn薄膜结构的影响

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TiCrN thin films have been prepared using a reactive DC magnetron sputtering system from a mosaic target. The effects of sputtering current, in the range of 300 to 700 mA, on the structure of the thin films were investigated. The crystal structure, microstructure, thickness, and composition were characterized by GI-XRD, FE-SEM and EDS technique, respectively. The results revealed that all the as-deposited films were formed as a (Ti,Cr)N solid solution. The as-deposited TiCrN films showed a nanostructure with a crystallite size less than 70 nm. The crystal sizes of all planes were in the range of 22.2 to 69.9 nm. The lattice constants were in the range of 4.149 Å to 4.175 Å. The thickness increases from 1630 nm to 4910 nm with increasing the sputtering current. The elemental composition (Ti Cr and N contents) of the as-deposited films were varied with the sputtering current. Lastly, the all of the thin films in this work showed compact columnar and dense morphology as a resulted of increasing the sputtering current.
机译:使用来自马赛克靶的反应性DC磁控溅射系统制备TiCrn薄膜。研究了溅射电流的影响,在300至700mA的范围内,对薄膜的结构进行了研究。通过Gi-XRD,Fe-SEM和EDS技术的表征晶体结构,微观结构,厚度和组合物。结果表明,所有沉积的膜形成为(Ti,Cr)N固溶液。沉积的TiCrN膜显示纳米结构,具有小于70nm的微晶尺寸。所有平面的晶体尺寸在22.2至69.9 nm的范围内。晶格常数在4.149埃至4.175的范围内。随着溅射电流的增加,厚度从1630nm到4910nm增加。用沉积膜的元素组成(Ti Cr和N含量)随着溅射电流而变化。最后,这项工作中的所有薄膜显示出紧凑的柱状和致密的形态,导致溅射电流增加。

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