Development of homoepitaxial growth technique on 4H-SiC vicinal off angled substrate.

摘要

We have investigated key factors for controlling the polytype and surface morphology of 4H-SiC homoepitaxial growth on less than 4° off-axis substrates. In addition, we characterized the crystal quality and surface quality of the epitaxial layer of an entire 3-inch vicinal off angled substrate. The results suggested that the control of surface free energy, control of the vicinal off angle itself, and high temperature growth, is highly important in controlling the surface morphology and polytype stability of the epitaxial layer grown on a vicinal off angled substrate. We also obtained a high-quality epitaxial layer grown on a 3-inch vicinal off angle substrate, which was comparable to those on 4° off-axis substrates.