HOMOEPITAXIAL GROWTH METHOD, HOMOEPITAXIAL CRYSTAL STRUCTURE, HOMOEPITAXIAL CRYSTAL GROWTH APPARATUS, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a homoepitaxial growth method, in which ZnO-based semiconductor crystal can be grown on ZnO substrate at temperatures higher than 1,000°C; and to provide a homoepitaxial crystal structure, a homoepitaxial crystal growth apparatus, and a semiconductor device.;SOLUTION: The method includes a step of carrying out crystal growth of ZnO-based semiconductor layer 46 on ZnO substrate 40 by introducing a reactant gas, in which zinc content gas and oxygen content gas are mixed, onto the ZnO substrate 40. Partial pressure of zinc content gas is 1×10^-4 atmospheric pressure or below, crystal growth temperature is 1,000°C or more, and a supplying ratio VI/II of group VI element and group II element is 1 to 100. The homoepitaxial crystal structure, the homoepitaxial crystal growth apparatus, and the semiconductor device are also provided.;COPYRIGHT: (C)2010,JPO&INPIT