Nitridation effects of gate oxide on channel properties of SiC trench MOSFETs

机译：栅氧化物对SiC沟槽MOSFET通道特性的氮化作用

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We have studied gate oxide processes for SiC trench MOSFETs. It is demonstrated that nitridation of gate oxide is effective to suppress the variation of channel mobility depending on channel plane orientation and substrate off-angles. In addition, improved channel mobility has been obtained by the combined process of NH_3 and N_2O POA.

机译：我们研究了SiC沟槽MOSFET的氧化物工艺。证明栅极氧化物的氮化是有效抑制沟道迁移率的变化，这取决于沟道面取向和基板偏离角度。此外，通过NH_3和N_2O POA的组合过程获得了改进的通道移动性。

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来源
《Conference on Silicon Carbide and Related Materials》|2014年||共4页
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K. Ariyoshi; S. Harada; J. Senzaki; T. Kojima; K. Kojima; Y. Tanaka; T. Shinohe;
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中图分类 TN304.1-532;
关键词
Trench MOSFET; UMOSFET; (11-20); gate oxide; channel mobility; nitridation;

机译：沟通MOSFET;UMOSFET;（11-20）;栅极;沟道流动性;氮化;

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专利

1. Nitridation effects of gate oxide on channel properties of SiC trench MOSFETs [J] . K. Ariyoshi, S. Harada, J. Senzaki, Materials science forum . 2014,第pta1期

机译：栅极氧化物的氮化对SiC沟槽MOSFET沟道特性的影响
2. Analysis of Gate Oxide Nitridation Effect on SiC MOSFETs by Using Hall Measurement and Split C-V Measurement [J] . Masatoshi Tsujimura, Hidenori Kitai, Hiromu Shiomi, Materials science forum . 2016,第期

机译：用霍尔测量和分压式C-V测量分析SiC MOSFET的栅极氧化物氮化作用
3. Effects of Grounding Bottom Oxide Protection Layer in Trench-Gate SiC-MOSFET by Tilted Al Implantation [J] . Yutaka Fukui, Katsutoshi Sugawara, Rina Tanaka, Materials science forum . 2020,第期

机译：倾斜AL植入沟槽栅极SiC-MOSFET接地底氧化物保护层的影响
4. Nitridation effects of gate oxide on channel properties of SiC trench MOSFETs [C] . K. Ariyoshi, S. Harada, J. Senzaki, Conference on Silicon Carbide and Related Materials . 2014

机译：栅氧化物对SiC沟槽MOSFET通道特性的氮化作用
5. 4H-SiC Trench-Gate MOSFET: Practical Surface-Channel Mobility Extraction [D] . Harmon, Jeffrey Lee. 2019

机译：4H-SIC沟槽MOSFET：实用的表面沟道迁移率提取
6. 4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics [O] . Jaeyeop Na, Jinhee Cheon, Kwangsoo Kim 2021

机译：4H-SIC双沟MOSFET采用分流异质结闸用于改善开关特性
7. Enhancement of inversion channel mobility in 4H-SiC MOSFETs using a gate oxide grown in nitrous oxide (N2O) [O] . G. Gudjónsson, H. Ö. Ólafsson, E. Ö. Sveinbjörnsson 2015

机译：使用氧化亚氮（N2O）中生长的栅极氧化物增强4H-siC mOsFET中的反转沟道迁移率
8. Normally-off 4H-SiC Trenched Gate MOSFETs with High Mobility (Preprint) [R] . Wu, J., Hu, J., Zhao, J. H., 2007

机译：具有高迁移率的常闭4H-siC沟槽栅极mOsFET（预印刷）

Nitridation effects of gate oxide on channel properties of SiC trench MOSFETs

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