Effects of Low-Energy Electron Irradiation on Enhancement-mode AlGaN/GaN high-electron-mobility transistors

摘要

The effects of low energy (1.8 MeV) electron irradiation on enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) have been reported. When the dose up to l.l×10~(16) cm~(-2), the saturation drain current and maximal transconductance of E-mode AlGaN/GaN HEMTs increase after irradiation. However, almost no change of threshold voltage and gate leakage current is observed. The results are explained by the creation of positive charges in the AlGaN layer by ionizing energy loss, especially the creation of N vacancies and Ga vacancies by non-ionizing energy loss. Moreover, low-energy electron irradiation could recover the electron mobility.