Monolithic integration of metal-ferroelectric-semiconductor heterostructure using atomic layer deposition

摘要

Integration of perovskite oxides with silicon and germanium can enable the realization of novel electronics device designs and the improvement of device performance. In particular, the wide variety of perovskite oxides and their ability to grow epitaxially on silicon and germanium allows the design of monolithically integrated semiconductor devices. The fabrication of monolithically integrated metal-ferroelectric-semiconductor structures is reported. Out-of-plane orientation of BaTiO_3 ferroelectric film is demonstrated, and process considerations to ensure oxide electrode conductivity are discussed. The structures reported here demonstrate the feasibility of fabricating ferroelectric field effect devices that are monolithically integrated into silicon and/or germanium platforms.