90nm Two-Stage Operational Amplifier Using Floating-gate MOSFET

摘要

This paper present an Operational amplifier (op-amp) design using Floating-gate Metal-Oxide-Semiconductor (FGMOS). FGMOS is a technology design that has been introduced as an element in low voltage circuit design in CMOS technology. Proposed 90nm FGMOS operational amplifier circuit consists of two stages namely input differential circuit and output buffer stage that contributes in amplifying an input signal. The simulate results show approximately 42 dB of gain with 3dB-bandwidth of 233 kHz, unity gain bandwidth of 23.6 MHz and total power dissipation of 203.3520 mW. The proposed FGMOS designs show comparable result with conventional MOSFET designs.