Sensitive method of evaluating process induced damage in MOSFETs using a differential amplifier operational principle

摘要

Techniques for measuring process induced damage, such as damage experienced during plasma etching or ion implementation, utilize a differential amplifier having multi-layer antennas (capacitors) of different sizes formed on respective inputs. Measurement of &Dgr;Ids (the difference between Ids.sub.1 and Ids.sub.2 off a MOSFET of the differential pair) or &Dgr;Idlin provides a sensitive and accurate measure of process induced damage. The techniques can be applied to monitor process induced damage while the manufacturing process is ongoing or as a measure of quality of the finished product.