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首页> 外文期刊>Journal of circuits, systems and computers >MOSFET-ONLY TWO-STAGE OPERATIONAL AMPLIFIERS WITH MILLER COMPENSATION: DESIGN AND FABRICATION IN NANO-SCALE CMOS
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MOSFET-ONLY TWO-STAGE OPERATIONAL AMPLIFIERS WITH MILLER COMPENSATION: DESIGN AND FABRICATION IN NANO-SCALE CMOS

机译:具有MOSFET补偿的只有MOSFET的两级运算放大器:纳米尺度CMOS的设计和制造

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摘要

Nano-scale area-efficient MOS devices are employed in this article to stabilize high-speed operational amplifiers (opamps) for those applications that deal with negative feedback. As an alternative choice, metal-insulator-metal (MIM) capacitors cannot be integrated in every technology as they require additional process masks. Moreover, these components suffer from large silicon area. In this paper, considerations of a successful MOSFET-only amplifier design are highlighted and described. These considerations make it possible to fabricate these amplifiers for a nano-scale digital system-on-chip (SoC). Circuit-level simulations include comparison between MOS capacitors (MOSCAPs) with MIM capacitors (MIMCAPs) in two identical processes. The efficiency of the given design considerations are also validated through simulation in 90-nm CMOS technology. A MOSFET-only amplifier is designed as the main part of a 5MS/s sample-and-hold. Using the proposed design techniques, the MOSFET-only amplifier with Miller compensation recovers 51% silicon die with respect to a MIMCAP amplifier for identical signal-to-noise-plus-distortion (SNDR) ratio.
机译:本文采用纳米级面积有效的MOS器件来稳定高速运算放大器(opamps),以应对负反馈应用。作为一种替代选择,金属绝缘体金属(MIM)电容器不能集成到每种技术中,因为它们需要附加的工艺掩模。而且,这些组件的硅面积较大。在本文中,重点介绍了成功的仅MOSFET放大器设计的考虑因素。这些考虑因素使得制造用于纳米级数字片上系统(SoC)的放大器成为可能。电路级仿真包括在两个相同的过程中比较MOS电容器(MOSCAP)与MIM电容器(MIMCAP)。通过90-nm CMOS技术进行的仿真也验证了给定设计考虑因素的效率。仅MOSFET放大器被设计为5MS / s采样保持的主要部分。使用拟议的设计技术,具有米勒补偿功能的仅MOSFET放大器相对于MIMCAP放大器,可恢复51%的硅芯片,从而具有相同的信噪比(SNDR)比。

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