Production Readiness of AlGaN/GaN HEMT on 6'/8' Si

摘要

Growth of crack-free AlGaN/GaN heterostructures on 6 and 8 inch Si(111) by 5×6" and 3×8" multi-wafer K465i production MOCVD system is presented. The two-dimensional-electron-gas is formed at the AlGaN/GaN interface with average Hall mobility values more than 1800 cm~2/v.s and sheet resistance less than 400 Ohm/sq. Run to run repeatability of AlGaN/GaN structural qualities, wafer bow, and 2DEG properties show the potential manufacturing possibility with the epitaxial process stability and longevity.