Reliability of GaN HEMTs: Electrical and Radiation-Induced Failure Mechanisms

摘要

The reliability of AlGaN/GaN HEMTs is currently a limiting factor in the development of next-generation power amplifier technology. In this work, we use atomic-resolution transmission electron microscopy (TEM) to directly image the defects associated with device failure. Furthermore, we attempt to induce defects through electrical and radiation-induced stress on the device, and compare the mechanism for failure by TEM analysis.