3C-SiC on Si Hetero-epitaxial Growth for Electronic and Biomedical Applications

摘要

The growth of cubic silicon carbide on silicon, namely 3C-SiC/Si, has been extensively studied at the University of South Florida over the past decade and numerous electronic and biomedical applications explored using this material system. The key step to 3C-SiC devices is the growth of high-quality epitaxial layers of 3C-SiC. In order to improve the manufacturability of future 3C-SiC devices, a simplified 3C-SiC growth process on 50 and 100 mm Si (100) substrates has been developed in a low-pressure horizontal hot-wall chemical vapor deposition (CVD) reactor. A simplified growth process consists of a single thermal ramp to the growth temperature followed by the 3C-SiC growth. The 3C-SiC epitaxial layers were characterized via optical microscopy, secondary electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and secondary ion mass spectrometry (SIMS). Examples of biomedical devices realized with this material system are also introduced, including neural probes and in-vitro recording devices, as well as myoglobin and glucose biosensors.