Atomic Scale Kinetic Monte Carlo (KMC) Simulation on a new {111}-Oriented Chemical Vapor Deposition (CVD) Diamond Film Growth Process: Two-Step Growth

摘要

The growth of {111 }-oriented CVD diamond film under a two-step model was simulated at atomic scale by using revised KMC method. The simulation was conducted at various substrate temperature (1100K-1400K), CH_3 radical concentration (0.01%-0.03%) and atomic hydrogen concentration (0.005%-0.3%). The results showed that: Substrate temperature (T_s), the concentration of CH_3 ([CH_3]) and the concentration of atomic H ([H]) can produce important effects on the film deposition rate and surface roughness.