超薄膜Si外延生长过程的动力学蒙特卡罗模拟

摘要

A lattice-kinetic Monte Carlo model is established to study the dynamic mechanism during the early growing of Si/Si（111）. The diffusion processes of adatoms that influence the micro-morphology of thin film are discussed under the different substrate temperatures and deposition time, such as the micro-processes of diffusion, nucleation, and growth of island.%建立超薄膜Si外延生长的晶格一动力学蒙特卡罗模型，并应用该模型模拟了Si原子在Si（111）基底上外延生长的过程．系统研究了沉积时间、基片温度对于薄膜初始生长形貌的影响，如影响粒子的扩散与凝聚、岛的生长等微观过程．