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Preparation of epitaxial YBa_2Cu_3O_(7-y) films and CeO_2 buffer layer on Ni-5at.W substrates by MOD method

机译:在Ni-5AT上制备外延YBA_2CU_3O_(7-Y)薄膜和CEO_2缓冲层。通过MOD方法的%W基板

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Biaxially textured CeO_2 films were deposited on Ni-5at.%W (Ni-5W) tapes by a metal-organic deposition (MOD) method. Subsequent YBa_2Cu_3O_(7-y) (YBCO) films were prepared using the (MOD) method leading to a simplified coated conductor architecture of YBCO/CeO_2/Ni-5W. X-ray diffraction measurements revealed an epitaxial growth of the CeO_2 buffer layer the 7.06°, 5.16°, for the out-of-plane and in-plane alignment, respectively. The superconducting coated film with a texture spread down to the out-of-plane texture is ω = 6.2° and the in-plane texture is Φ = 7.6°. The results indicate that single CeO_2-buffered Ni-5W tapes are suitable for the epitaxial growth of YBCO higher cube texture and the epitaxial YBCO film was obtained. To microstructural investigations, the film's SEM results showed a dense, smooth and crack-free surface morphology. The superconducting properties were measured by four probe method. The superconducting transition temperature (T_c) was about 90 K with a narrow transition of 0.8 K and the critical current density (J_c) was about 1.5×10~4 A/cm~2 at 77 K, 4T.
机译:双轴纹理的CEO_2薄膜沉积在Ni-5AT上。通过金属有机沉积(MOD)法沉积在Ni-5at中的胶带。使用通向YBCO / CEO_2 / NI-5W的简化涂布导体架构的(MOD)方法制备随后的YBA_2CU_3O_(7-Y)(YBCO)膜。 X射线衍射测量显示CEO_2缓冲层的外延生长分别为2.06°,5.16°,分别用于外平面和面内对准。具有纹理的超导涂层薄膜展开到平面外纹理是ω= 6.2°,面内纹理是φ= 7.6°。结果表明,单一CEO_2缓冲的Ni-5W胶带适用于YBCO高立方体纹理的外延生长,并获得外延ybco膜。为了微观结构调查,薄膜的SEM结果显示了致密,光滑和无裂缝的表面形态。通过四个探针法测量超导性能。超导转变温度(T_C)为约90k,窄的转变为0.8k,临界电流密度(J_c)为约1.5×10〜4a / cm〜2,在77k,4t。

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