首页> 外文会议>International Symposium on Extreme Ultraviolet Lithography >Development Status of EUVL Mask Blank and Substrate - (PPT)
【24h】

Development Status of EUVL Mask Blank and Substrate - (PPT)

机译:EUVL掩模坯料和衬底的开发状态 - (PPT)

获取原文

摘要

ML defect count has been continuously decreased as results of process developments. The champion data was 0.05 cm~(-2)@> 56 nm SEVD and 0.17 cm~(-2)@> 34 nm SEVD. AGC continues the process developments for the ML defect reduction as well as the material development for the 2nd generation EUVL blank.
机译:随着过程开发的结果,ML缺陷计数已被连续降低。冠军数据为0.05cm〜(-2)@> 56nm sevd和0.17cm〜(-2)@> 34 nm sevd。 AGC继续进行ML缺陷减少的过程开发以及第2代EUVL空白的材料开发。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号