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MANUFACTURING METHOD FOR REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY (EUVL), AND MANUFACTURING METHOD FOR SUBSTRATE HAVING REFLECTIVE LAYER FOR EUVL
MANUFACTURING METHOD FOR REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY (EUVL), AND MANUFACTURING METHOD FOR SUBSTRATE HAVING REFLECTIVE LAYER FOR EUVL
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机译:EUV光刻(EUVL)的反光面膜的制造方法以及具有EUVL的基材具有反光层的制造方法
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摘要
PROBLEM TO BE SOLVED: To provide a manufacturing method for an EUV mask blank, which can suppress adherence of a film material at the extraction or transfer of the film material, which adheres to a glass substrate holding unit, to a glass substrate.;SOLUTION: A manufacturing method for a reflective mask blank for EUVL comprises the step of forming a reflective layer and an absorption layer on a glass substrate 10 using a sputtering apparatus. The sputtering apparatus comprises a substrate holding unit 20 for holding a rear surface side of the glass substrate 10; a shielding unit 30 for covering at least a part of the entire periphery of a side face of the glass substrate 10 and the entire periphery of a side face of the substrate holding unit 20 in the thickness direction including an upper end of the substrate holding unit 20, covering an outer peripheral part of a film-formation surface of the glass substrate 10, having an opening for loading, and being capable of moving vertically between the position of loading and the position of the film formation; and an arm for loading the glass substrate 10 or a reflective mask blank for EUVL after the manufacture. The opening for loading, the glass substrate 10, and the arm for loading satisfy a predetermined condition.;COPYRIGHT: (C)2013,JPO&INPIT
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