首页> 外国专利> Substrate with EUV lithography for reflective layer , EUV lithography for reflective mask blank , EUV lithography for reflective mask , and method of manufacturing a substrate with the reflective layer .

Substrate with EUV lithography for reflective layer , EUV lithography for reflective mask blank , EUV lithography for reflective mask , and method of manufacturing a substrate with the reflective layer .

机译:具有用于反射层的EUV光刻技术,用于反射掩模坯料的EUV光刻技术,用于反射掩模的EUV光刻技术,以及具有反射层的衬底的制造方法。

摘要

Reflective layer-substrate used in the production of the EUV mask blank and the EUV mask blank, a decrease in reflectance by oxidation of the Ru protective layer is suppressed, and provision of a method of manufacturing the reflective layer with the substrate. On the substrate, and a reflective layer for EUV lithography substrate with a reflective layer for reflecting EUV light, and a protective layer for protecting the reflective layer formed in this order, wherein the reflective layer, Mo / Si multilayer reflective film is, or Ru layer, the protective layer, a Ru compound layer between the reflective layer and, said protective layer containing 0.5~25at% of nitrogen and 75 to 99 of Si. EUV lithography reflective layer with the substrate and wherein the intermediate layer containing 5at% is formed.
机译:在EUV掩模坯料和EUV掩模坯料的生产中使用的反射层-基材,抑制了由于Ru保护层的氧化引起的反射率的降低,并且提供了一种用基材制造反射层的方法。在基板上,用于EUV光刻的基板的反射层具有用于反射EUV光的反射层和用于保护反射层的保护层,该保护层以此顺序形成,其中该反射层,Mo / Si多层反射膜为Ru或Ru层,保护层,反射层之间的Ru化合物层和所述保护层包含0.5〜25at%的氮和75〜99的Si。具有衬底的EUV光刻反射层,并且其中形成包含5at%的中间层。

著录项

  • 公开/公告号JP5673555B2

    专利类型

  • 公开/公告日2015-02-18

    原文格式PDF

  • 申请/专利权人 旭硝子株式会社;

    申请/专利号JP20110545247

  • 申请日2010-12-09

  • 分类号G03F1/24;G03F1/48;H01L21/027;

  • 国家 JP

  • 入库时间 2022-08-21 15:29:14

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号