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Substrate with EUV lithography for reflective layer , EUV lithography for reflective mask blank , EUV lithography for reflective mask , and method of manufacturing a substrate with the reflective layer .
Substrate with EUV lithography for reflective layer , EUV lithography for reflective mask blank , EUV lithography for reflective mask , and method of manufacturing a substrate with the reflective layer .
Reflective layer-substrate used in the production of the EUV mask blank and the EUV mask blank, a decrease in reflectance by oxidation of the Ru protective layer is suppressed, and provision of a method of manufacturing the reflective layer with the substrate. On the substrate, and a reflective layer for EUV lithography substrate with a reflective layer for reflecting EUV light, and a protective layer for protecting the reflective layer formed in this order, wherein the reflective layer, Mo / Si multilayer reflective film is, or Ru layer, the protective layer, a Ru compound layer between the reflective layer and, said protective layer containing 0.5~25at% of nitrogen and 75 to 99 of Si. EUV lithography reflective layer with the substrate and wherein the intermediate layer containing 5at% is formed.
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