Analysis and simulation of inverter employing SiC Schottky diode

摘要

The effect of the diode reverse recovery on the performance of inverters is analyzed. The PSpice simulation of the SPWM full bridge inverter has been performed with the Si p-i-n ultra fast diode and the SiC Schottky diode respectively used as the free wheeling diode under the same condition. With their comparison, the results show that the SiC Schottky diode can greatly reduce the power loss of inverters. Further more, the effects of diode parameter CJO on reverse recovery characteristics have been discussed.