Accurate effective mobility extraction in SOI MOS transistors

摘要

Accurate effective mobility calculations of MOSFETs are necessary when assessing the importance of various performance limiting carrier scattering mechanisms. A novel and simple to use technique to correct for the absence of drain bias during the split CV measurement is presented. Its effectiveness is demonstrated by application to a quasi-planar SOI MOSFET at 300K and 4K. The lateral field and diffusion corrections, which are commonly neglected, are considered and it is shown that they cancel.